schottky diode features z low forward voltage z fast switching BAS40W marking: 43? BAS40W-06 marking: 46 BAS40W-05 marking 45 BAS40W-04 marking 44 maximum ratings @t a =25 parameter symbol limits unit peak repetitive peak reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 40 v forward continuous current i fm 200 ma power dissipation p d 150 mw thermal resistance. junction to ambient air r ja 833 /w junction temperature t j 125 storage temperature range t stg -65-125 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 10 a 40 v reverse voltage leakage current i r v r =30v 200 na forward voltage v f i f =1ma i f =40ma 380 1000 mv diode capacitance c d v r =0,f=1mhz 5 pf reverse recovery time t r r i rr =1ma, i r =i f =10ma r l =100 ? 5 ns sot-323 BAS40W/-04/-05/-06 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics BAS40W/-04/-05/-06 2 date:2011/05 www.htsemi.com semiconductor jinyu
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